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| PTF 10065 30 Watts, 1.93-1.99 GHz GOLDMOS (R) Field Effect Transistor Description The PTF 10065 is a 30-watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability * * * * Output Power and Efficiency vs. Input Power 40 Output Power 80 70 60 Efficiency 20 Output Power (Watts) 30 Efficiency 50 40 e 065 123 456 992 1A 10 VDD = 28 V 10 30 20 10 0 IDQ = 380 mA f = 1.99 GHz 0 1 2 3 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) ACPR (40 Walsh Codes) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) Gain Flatness (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.930-1.990 GHz) Drain Efficiency (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.99 GHz) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps 885 KHz ACPR 1.98 MHz ACPR GDf hD Min -- - 50 - 62 -- 9 Typ 11.0 -- -- -- -- Max -- -- -- 0.7 -- Units dB dBc dBc dB % (table continues next page) e 1 PTF 10065 RF Specifications (cont.) (100% Tested) Characteristic Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 380 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1.99 GHz--all phase angles at frequency of test) Input Return Loss (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) Insertion Phase (Referenced to Correlation Devices) (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.96 GHz) e Symbol P-1dB Y Min 30 -- Typ -- -- Max -- 10:1 Units Watts -- Rtn Loss f 10 -10 -- -- -- +10 dB Deg. Electrical Characteristics (cont.) (100% Tested) (100% Tested) Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs IGSsf VGS(q) Min 62 -- -- -- -- 3.0 Typ -- -- 3.8 1.8 -- -- Max -- 1.0 -- -- 1 5.0 Units Volts mA Volts Siemens mA V Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Gate Quiescent Voltage VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 6 A VGS = 10 V VDS = 28 V, ID = 380 mA Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 62 20 200 120 0.7 -40 to +150 1.4 Unit Vdc Vdc C Watts W/C C C/W 2 Typical Performance Typical P OUT , Gain & Efficiency (at P-1dB) vs. Frequency 80 70 11 Efficiency (% ) x Output Power & Efficiency e 12 PTF 10065 Broadband Test Fixture Performance 12 Efficiency 11 Gain -60 5 -15 50 -25 -35 40 1990 80 VDD = 28 V, IDQ = 380 mA P OUT = 30 W 70 Gain Gain (dB) VDD = 28 V IDQ = 380 m A 60 50 40 10 Output Power (W ) 9 1930 10 Return Loss 30 20 1990 1945 1960 1975 9 1930 1945 1960 1975 Fre que ncy (M Hz) Frequency (MHz) Power Gain vs. Output Power 12 11 10 IDQ = 380 mA Gain vs. Frequency 12.0 11.8 Power Gain (dB) 9 8 7 6 5 4 0 IDQ = 180 mA Gain (dB) x 11.6 11.4 11.2 11.0 1930 VDD = 28 V IDQ = 380 mA POUT = 3 W IDQ = 90 mA 10 VDD = 28 V f = 1990 MHz 1000 1940 1950 1960 1970 1980 1990 Output Power (Watts) Frequency (MHz) Output Power (@ 1 dB Compression) vs. Supply Voltage 40 ACPR vs. W-CDMA Output Power (as measured in a broadband circuit) -30 Output Power (Watts) 35 VDD = 28 V IMD (dBc) x -40 30 25 20 15 10 24 25 26 27 28 29 30 IDQ = 380 mA f = 1930 MHz f = 1990 MHz IDQ = 380 mA f = 1990 MHz -50 f = 1960 MHz -60 30 35 40 45 Supply Voltage (Volts) Output Power (dBm) 3 Return Loss (dB) xx Efficiency (%) Gain (dB) x PTF 10065 Typical Performance (cont.) e Capacitance vs. Supply Voltage * Voltage normalized to 1.0 V Series show current (A) Cds and Cgs (pF) 0.200 0.692 1.183 1.675 2.167 2.658 120 100 80 7 Gate-Source Voltage vs. Case Temperature 1.03 1.02 Gate-Source Voltage 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 VGS = 0 V f = 1 MHz 6 5 60 40 20 Cds 3 2 Crss 0 0 10 20 30 40 1 0 Case Temperature (C) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Impedance Data (VDD = 28 V, POUT = 30 W, IDQ = 380 mA) Z0 = 50 W D Z Source Z Load G S Frequency MHz 1930 1945 1960 1975 1990 R Z Source W jX -10.50 -9.23 -8.01 -6.79 -5.56 R 11.2 11.8 12.4 13.0 13.6 Z Load W jX -4.32 -4.23 -4.14 -4.05 -3.96 2.79 2.62 2.45 2.27 2.10 4 Crss Cgs 4 Test Circuit e PTF 10065 Test Circuit Schematic for f = 1990 MHz DUT PTF 10065 l1 0.072 l 1990 MHz 0.118 l 1990 MHz l2 l3 0.063 l 1990 MHz 0.043 l 1990 MHz l4 l5 0.045 l 1990 MHz 0.097 l 1990 MHz l6 l7 0.028 l 1990 MHz 0.244 l 1990 MHz l8 l9 0.250 l 1990 MHz l10 0.110 l 1990 MHz LDMOS Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip11.23 W Microstrip 9.97 W Microstrip 9.97 W Microstrip 50 W Microtrip 67.35 W Microstrip 80.25 W C2, C10 C3 C4, C8, C1, C7 C5 C6 C9 J1, J2 L1 L2 R1, R2 R3 PCB Capacitor, 10 F, 35V Digi-Key PC56106-ND Capacitor, 0.1 F Digi-Key P4525-ND Capacitor, 10pF 100B 100 Capacitor, 1.2 pF 100B 1R2 Capacitor, 0.7 pF 100B 0R7 Capacitor, 0.1 F ATC 200B Connector, SMA, Female, Panel Mount Inductor, 15 nH 4 mm Ferrite Bead Philips BD 53/3/4.6-452 Resistor, 220 ohm 1/4W Digi-Key P220ECT-ND Resistor, 1.0 ohm Digi-Key P1.0 ECT 0.031" Thick, 2 oz Copper Both Sides, AlliedSignal G200 e PTF 10065 Assembly Diagram (not to scale) 5 PTF 10065 Test Circuit (cont.) e ERICSSON 10048/10144_D e PTF 10065 Artwork (not to scale) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 2000 Ericsson Inc. EUS/KR 1522-PTF 10065 Uen Rev. A 12-14-00 6 |
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